US Patent Issued on May 13 for "Configurable random-access memory (RAM) array including through-silicon via (TSV) bypassing physical layer" (California Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,688, issued on May 13.

"Configurable random-access memory (RAM) array including through-silicon via (TSV) bypassing physical layer" was invented by Jianwen Li (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system comprising a main logic circuit comprising a memory controller comprising a signal control circuit and a through-silicon via (TSV) connection point electrically coupled to the signal control circuit, and a memory device comprising a memory unit comprising a TSV electrically coupled to the TSV connection point of the main logic circuit, wherein the signal control circuit is to transmit a signal using the TSV to operate th...