ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,544, issued on May 13.
"CMOS SRAM cell having trench structure" was invented by Taihyun Choi (Incheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a CMOS SRAM cell having a trench structure and, more specifically, to a CMOS SRAM cell having a trench structure, the CMOS SRAM cell being manufactured using a vertical MOSFET of a trench structure having a gate, a source, and a drain that form a vertical structure, such that there is a current flow in an active region between trench gate electrodes and vertical source and drain regions, and thus being capable of exhibiting various advantages with respect to...