ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,943, issued on March 18.

"Memory device interface and method" was invented by Brent Keeth (Boise, Idaho), Owen Fay (Meridian, Idaho), Chan H. Yoo (Boise, Idaho), Roy E. Greeff (Boise, Idaho) and Matthew B. Leslie (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods are described, including memory devices and systems. Memory devices, systems and methods may include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, hi...