ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,567, issued on March 11.
"Manufacturing method of integrated substrate structure" was invented by Dyi-Chung Hu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of an integrated substrate structure is provided. The manufacturing method includes the following steps. A fine redistribution structure is formed over a temporary carrier. A plurality of first trenches is formed in the fine redistribution structure to form a plurality of fine redistribution segments. A coarse redistribution structure is coupled to the plurality of fine redistribution segments through a plurality of conductive connectors. A size of the c...