US Patent Issued on July 22 for "Semiconductor constructions, methods of forming transistor gates, and methods of forming NAND cell units" (Idaho Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,343, issued on July 22.

"Semiconductor constructions, methods of forming transistor gates, and methods of forming NAND cell units" was invented by Yongjun Jeff Hu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at least some portions of the different types of gates. FET and charge storage transistor gate stacks may be formed. The gate stacks may each include a gate material, an insulative material, and a sacrificial material. The sacrificial material is removed from the FET and char...