US Patent Issued on July 22 for "Microelectronic devices with isolation trenches in upper portions of tiered stacks, and related methods" (Idaho Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,333, issued on July 22.

"Microelectronic devices with isolation trenches in upper portions of tiered stacks, and related methods" was invented by Yi Hu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming microelectronic devices include forming lower and upper stack structures, each comprising vertically alternating sequences of insulative and other structures arranged in tiers. Lower and upper pillar structures are formed to extend through the lower and upper stack structures, respectively. An opening is formed through the upper stack structure, and at least a portion of the other structures of the upper stack are replac...