US Patent Issued on Jan. 13 for "Thin film transistor, manufacturing method thereof, and display panel" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,061, issued on Jan. 13.

"Thin film transistor, manufacturing method thereof, and display panel" was invented by Shuning Zhao (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor, a manufacturing method thereof, and a display panel are provided. The thin film transistor includes a semiconductor layer, a gate disposed corresponding to a position of the semiconductor layer, and a gate insulating layer disposed between the semiconductor layer and the gate. The gate insulating layer includes a first gate insulating layer and a second gate insulating layer. A dielectric constant of the first gate insulating layer is great...