US Patent Issued on Dec. 16 for "Microelectronic devices with tunneling structures having partial-height high-Kappa material regions" (Idaho Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,619, issued on Dec. 16.

"Microelectronic devices with tunneling structures having partial-height high-Kappa material regions" was invented by Ugo Russo (Boise, Idaho) and Chris M. Carlson (Nampa, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical structure extends through a tiered structure of alternating conductive and insulative materials. The vertical structure includes a channel structure and a tunneling structure. At least one of the conductive materials of the tiered structure provides a select gate tier (e.g., including a control gate for a select gate drain (SGD) transistor). Adjacent the select gate tier of the tiered structure...