ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,373, issued on Aug. 5.
"Radiation mode tailored semiconductor laser" was invented by Ronald LaComb (W Greenwich, R.I.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures...