US Patent Issued on Aug. 5 for "Memory devices and systems with parallel impedance adjustment circuitry and methods for operating the same" (Idaho Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,052, issued on Aug. 5.

"Memory devices and systems with parallel impedance adjustment circuitry and methods for operating the same" was invented by Hyun Yoo Lee (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and apparatuses related to memory operation with common clock signals are provided. A memory device or system that includes one or more memory devices may be operable with a common clock signal without a delay from switching on-die termination on or off. For example, a memory device may comprise first impedance adjustment circuitry configured to provide a first impedance to a received clock signal having a clock im...