US Patent Issued on April 8 for "Method of fabricating thin, crystalline silicon film and thin film transistors" (Taiwanese Inventor)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,550, issued on April 8.

"Method of fabricating thin, crystalline silicon film and thin film transistors" was invented by Ramesh Kumar Harjivan Kakkad (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a polycrystalline silicon TFT includes forming nickel patterns on a substrate, forming a phosphorus doped silicon layer over the substrate and nickel patterns, and forming an intrinsic silicon layer on the phosphorus doped silicon layer. Alternatively, the intrinsic silicon layer can be formed on the substrate, the phosphorus doped silicon layer on the intrinsic silicon layer, and the nickel patterns on the phospho...