US Patent Issued on April 15 for "Semiconductor structure and method for guarding a low voltage surface region from a high voltage surface region" (British Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,264, issued on April 15.

"Semiconductor structure and method for guarding a low voltage surface region from a high voltage surface region" was invented by David Summerland (Nottingham, Great Britain), Roger Light (Nottingham, Great Britain) and Luke Knight (Nottingham, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure and method for guarding a high voltage region at a semiconductor surface from a low voltage region at the semiconductor surface. The structure comprising at least two trenches between the high and low voltage regions to isolate the high voltage region from the low voltage region. The trenches are spaced apart so a...