ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,180, issued on April 15.
"Memory arrays and methods used in forming a memory array" was invented by Harsh Narendrakumar Jain (Boise, Idaho) and Shuangqiang Luo (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers having channel-material strings therein. Conductive vias are formed through insulating material that is directly above the channel-material strings. Individual of the conductive vias are directly electrically coupled to individual of the channel-material strings. After for...