INTERNATIONAL PATENT: ZING SEMICONDUCTOR CORPORATION, 上海新昇半导体科技有限公司 FILES APPLICATION FOR "CHARACTERIZATION AND EVALUATION METHODS FOR WAFER WARPAGE TOPOGRAPHY AND CHARACTERIZATION AND EVALUATION METHODS FOR INGOT WIRE-CUT TOPOGRAPHY"

Posted On: 2026-01-04

GENEVA, Jan. 4 -- ZING SEMICONDUCTOR CORPORATION (No. 1000, Yunshui Rd., Lin-gang Special AreaOf China (Shanghai) Pilot Free Trade ZonePudong New Area, Shanghai 201306), 上海新昇半导体科技有限公司 (中国上海市浦东新区中国（上海）自由贸易试验区临港新片区云水路1000号) filed a patent application (PCT/CN2025/089461) for "CHARACTERIZATION AND EVALUATION METHODS FOR WAFER WARPAGE TOPOGRAPHY, AND CHARACTERIZATION AND EVALUATION METHODS FOR INGOT WIRE-CUT TOPOGRAPHY" on Apr 17, 2025. With p...

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INTERNATIONAL PATENT: ZING SEMICONDUCTOR CORPORATION, 上海新昇半导体科技有限公司 FILES APPLICATION FOR "CHARACTERIZATION AND EVALUATION METHODS FOR WAFER WARPAGE TOPOGRAPHY AND CHARACTERIZATION AND EVALUATION METHODS FOR INGOT WIRE-CUT TOPOGRAPHY"