INTERNATIONAL PATENT: YANGTZE MEMORY TECHNOLOGIES CO., LTD., 长江存储科技有限责任公司 FILES APPLICATION FOR "SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR, MEMORY AND STORAGE SYSTEM"

GENEVA, Feb. 8 -- YANGTZE MEMORY TECHNOLOGIES CO., LTD. (No.88 Weilai 3rd Road, East Lake High-Tech Development ZoneWuhan, Hubei 430000), 长江存储科技有限责任公司 (中国湖北省武汉市东湖新技术开发区未来三路88号) filed a patent application (PCT/CN2025/110701) for "SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR, MEMORY AND STORAGE SYSTEM" on Jul 25, 2025. With publication no. WO/2026/026686, the details related to the patent application was published on Feb 05, 2026.

Notably, the patent application was submitted under the International Pate...