INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "SELECTIVE ETCHING OF SILICON ADJACENT TO SILICON-GERMANIUM"

GENEVA, Oct. 6 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/010523) for "SELECTIVE ETCHING OF SILICON ADJACENT TO SILICON-GERMANIUM" on Jan 07, 2025. With publication no. WO/2025/207176, the details related to the patent application was published on Oct 02, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HAJIBABAEINAJAFABADI, Hamed (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), KANAKI, Toshiki (650 MitsuzawaHosaka-cho, Nira...