INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHODS FOR WET ATOMIC LAYER ETCHING OF TUNGSTEN"

GENEVA, Oct. 6 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/013710) for "METHODS FOR WET ATOMIC LAYER ETCHING OF TUNGSTEN" on Jan 30, 2025. With publication no. WO/2025/207199, the details related to the patent application was published on Oct 02, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): DAHAL, Tulashi (401 S 1st St, Suite 900Austin, Texas 78704), ABEL, Kate (401 S 1st St, Suite 900Austin, Texas 78704)

Abstract: Various embodiments of me...