INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHODS FOR WET ATOMIC LAYER ETCHING OF TRANSITION METAL OXIDE DIELECTRIC MATERIALS"

GENEVA, June 24 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741) filed a patent application (PCT/US2024/051102) for "METHODS FOR WET ATOMIC LAYER ETCHING OF TRANSITION METAL OXIDE DIELECTRIC MATERIALS" on Oct 11, 2024. With publication no. WO/2025/128187, the details related to the patent application was published on Jun 19, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ABEL, Kate (2400 Grove Blvd.Austin, Arizona 78741)

Abstract: The present disclosure provides a new wet atomic layer e...