INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHODS FOR PROTECTING A PERIPHERAL EDGE AND BACKSIDE OF A SEMICONDUCTOR SUBSTRATE"

GENEVA, July 21 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741) filed a patent application (PCT/US2024/052431) for "METHODS FOR PROTECTING A PERIPHERAL EDGE AND BACKSIDE OF A SEMICONDUCTOR SUBSTRATE" on Oct 22, 2024. With publication no. WO/2025/151169, the details related to the patent application was published on Jul 17, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HU, Shan (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), D'ELIA, Peter (NanoFab 300 South 255 Fuller...