INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHODS AND STRUCTURES FOR IMPROVING ETCH PROFILE OF UNDERLYING LAYERS"

GENEVA, March 4 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741) filed a patent application (PCT/US2024/029200) for "METHODS AND STRUCTURES FOR IMPROVING ETCH PROFILE OF UNDERLYING LAYERS" on May 14, 2024. With publication no. WO/2025/042453, the details related to the patent application was published on Feb 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LU, Yen-Tien (NanonFab300 South 255 Fuller RoadSuite 214Albany, New York 12203), CHANG, Shihsheng (NanonFab300 South 255 Fuller RoadS...