INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING SURFACE ALKYLATION"

GENEVA, March 10 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741) filed a patent application (PCT/US2024/035107) for "METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING SURFACE ALKYLATION" on Jun 21, 2024. With publication no. WO/2025/048934, the details related to the patent application was published on Mar 06, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ABEL, Kate (2400 Grove Blvd.Austin, Texas 78741)

Abstract: Embodiments of processes and methods that provide select...