INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHOD FOR SELECTIVELY DEPOSITING ETCH STOP LAYER"

GENEVA, Dec. 31 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/022783) for "METHOD FOR SELECTIVELY DEPOSITING ETCH STOP LAYER" on Apr 02, 2025. With publication no. WO/2025/264294, the details related to the patent application was published on Dec 26, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ROGERS, Jack (650 MitsuzawaHosaka-cho, Nirasaki City, Yamanashi 407-0192)

Abstract: A method for making a semiconductor device can include providing a...