INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "IN-SITU METAL DEPOSITION FOR REDUCED CHARGING DURING DIELECTRIC ETCH"

GENEVA, Aug. 26 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741) filed a patent application (PCT/US2024/058908) for "IN-SITU METAL DEPOSITION FOR REDUCED CHARGING DURING DIELECTRIC ETCH" on Dec 06, 2024. With publication no. WO/2025/174445, the details related to the patent application was published on Aug 21, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BAILLARGEON, Joshua (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), DORFNER, Alec (NanoFab 300 South 255 Fuller Rd...