INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC., ADVANCED MICRO DEVICES, INC. FILES APPLICATION FOR "METHODS OF FORMING SEMICONDUCTOR CLADDING LAYERS FOR SOURCE AND DRAIN CONTACTS AND SIDEWALL METAL CONTACTS OF A SEMICONDUCTOR DEVICE"

GENEVA, May 6 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (2400 Grove BoulevardAustin, Texas 78741), ADVANCED MICRO DEVICES, INC. (2485 Augustine DriveSanta Clara, California 95054) filed a patent application (PCT/US2024/052790) for "METHODS OF FORMING SEMICONDUCTOR CLADDING LAYERS FOR SOURCE AND DRAIN CONTACTS AND SIDEWALL METAL CONTACTS OF A SEMICONDUCTOR DEVICE" on Oct 24, 2024. With publication no. WO/2025/090748, the details related to the patent application was published on May 01, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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