INTERNATIONAL PATENT: TIANJIN B & M SCIENCE AND TECHNOLOGY CO., LTD., 天津巴莫科技有限责任公司 FILES APPLICATION FOR "HIGH-ENTROPY DOPED POSITIVE ELECTRODE MATERIAL AND PREPARATION METHOD THEREFOR AND USE THEREOF"

Posted On: 2026-02-01

GENEVA, Feb. 1 -- TIANJIN B & M SCIENCE AND TECHNOLOGY CO., LTD. (No. 8, Haitai Road, Huayuan Industrial Park (Huanwai), New Technology Industrial ZoneBinhai New Area, Tianjin 300384), 天津巴莫科技有限责任公司 (中国天津市滨海新区新技术产业园区华苑产业区（环外）海泰大道8号) filed a patent application (PCT/CN2024/130829) for "HIGH-ENTROPY DOPED POSITIVE ELECTRODE MATERIAL, AND PREPARATION METHOD THEREFOR AND USE THEREOF" on Nov 08, 2024. With publication no. WO/2026/020641, the details related t...

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इस लेख के रीप्रिंट को खरीदने या इस प्रकाशन का पूरा फ़ीड प्राप्त करने के लिए, कृपया हमे संपर्क करें.

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INTERNATIONAL PATENT: TIANJIN B & M SCIENCE AND TECHNOLOGY CO., LTD., 天津巴莫科技有限责任公司 FILES APPLICATION FOR "HIGH-ENTROPY DOPED POSITIVE ELECTRODE MATERIAL AND PREPARATION METHOD THEREFOR AND USE THEREOF"