INTERNATIONAL PATENT: THE JOHNS HOPKINS UNIVERSITY FILES APPLICATION FOR "METHODS OF EPITAXIAL GROWTH OF OPTIMAL THIN-FILM THERMOELECTRIC PERIODIC STRUCTURES FOR IMPROVED DEVICE PERFORMANCE"

GENEVA, May 27 -- THE JOHNS HOPKINS UNIVERSITY (3400 North Charles StreetBaltimore, Maryland 21218) filed a patent application (PCT/US2024/046796) for "METHODS OF EPITAXIAL GROWTH OF OPTIMAL THIN-FILM THERMOELECTRIC PERIODIC STRUCTURES FOR IMPROVED DEVICE PERFORMANCE" on Sep 13, 2024. With publication no. WO/2025/106151, the details related to the patent application was published on May 22, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): VENKATASUBRAMANIAN, Rama (c/o The Johns Hopkins Applied Physics Laboratory11100 John Hopkins RoadMail Stop 7-127Laurel, Maryland 20723), BALLARD, Jacob L. (...