INTERNATIONAL PATENT: TEXAS INSTRUMENTS INCORPORATED FILES APPLICATION FOR "SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER AND IN A BARRIER LAYER"

GENEVA, Feb. 4 -- TEXAS INSTRUMENTS INCORPORATED (P.O. Box 655474, Mail Station 3999Dallas, TX 75265-5474) filed a patent application (PCT/US2023/086473) for "SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER AND IN A BARRIER LAYER" on Dec 29, 2023. With publication no. WO/2025/024005, the details related to the patent application was published on Jan 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LEE, Dong Seup (6501 Taprock Dr.McKinney, TX 75070)

Abstract: The present disclosure describes a semiconductor device having a doped region underlying a gate layer and in a...