INTERNATIONAL PATENT: SUMITOMO ELECTRIC INDUSTRIES, LTD., 住友電気工業株式会社 FILES APPLICATION FOR "SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL"

GENEVA, April 1 -- SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka5410041), 住友電気工業株式会社 (大阪府大阪市中央区北浜四丁目５番３３号) filed a patent application (PCT/JP2024/031859) for "SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL" on Sep 05, 2024. With publication no. WO/2025/063054, the details related to the patent application was published on Mar 27, 2025.

Notably, the patent application was submitt...