INTERNATIONAL PATENT: SOUTHEAST UNIVERSITY, 东南大学 FILES APPLICATION FOR "LEVEL SHIFT CIRCUIT FOR IMPROVING ANTI-NOISE CAPABILITY OF HIGH-VOLTAGE GATE DRIVER CHIP"

GENEVA, Sept. 8 -- SOUTHEAST UNIVERSITY (No. 2 Sipailou, Xuanwu DistrictNanjing, Jiangsu 211189), 东南大学 (中国江苏省南京市玄武区四牌楼2号) filed a patent application (PCT/CN2024/128063) for "LEVEL SHIFT CIRCUIT FOR IMPROVING ANTI-NOISE CAPABILITY OF HIGH-VOLTAGE GATE DRIVER CHIP" on Oct 29, 2024. With publication no. WO/2025/179925, the details related to the patent application was published on Sep 04, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SUN, Weifeng (No. 2 Sipailou...