INTERNATIONAL PATENT: SOUTHEAST UNIVERSITY, 东南大学 FILES APPLICATION FOR "CONDUCTIVE CHANNEL STRUCTURE OF SILICON CARBIDE DEVICE AND FULLY INTEGRATED SILICON CARBIDE DEVICE AND FULLY INTEGRATED MANUFACTURING PROCESS THEREFOR"

GENEVA, Aug. 9 -- SOUTHEAST UNIVERSITY (No. 2 SipailouXuanwu DistrictNanjing, Jiangsu 211189), 东南大学 (中国江苏省南京市玄武区四牌楼2号) filed a patent application (PCT/CN2024/102864) for "CONDUCTIVE CHANNEL STRUCTURE OF SILICON CARBIDE DEVICE, AND FULLY INTEGRATED SILICON CARBIDE DEVICE AND FULLY INTEGRATED MANUFACTURING PROCESS THEREFOR" on Jul 01, 2024. With publication no. WO/2025/161260, the details related to the patent application was published on Aug 07, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Org...