INTERNATIONAL PATENT: SOITEC FILES APPLICATION FOR "SEMICONDUCTOR SUBSTRATE FOR LASER SEPARATION AND METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES"

GENEVA, Sept. 21 -- SOITEC (PARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN) filed a patent application (PCT/EP2025/055993) for "SEMICONDUCTOR SUBSTRATE FOR LASER SEPARATION AND METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES" on Mar 05, 2025. With publication no. WO/2025/190749, the details related to the patent application was published on Sep 18, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): CHANG, Cheng-Hung (c/o SOITECPARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN), RODA NEVE, Cesar (c/o SOITECPARC TECHNOLOGIQUE DES FONTAINESCHEMIN ...