INTERNATIONAL PATENT: SOITEC FILES APPLICATION FOR "METHOD FOR PREPARING A COMPOSITE STRUCTURE FOR PRODUCING A HOMOEPITAXIAL SILICON CARBIDE LAYER AND ASSOCIATED COMPOSITE STRUCTURE"

GENEVA, Oct. 13 -- SOITEC (PARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN) filed a patent application (PCT/EP2025/056547) for "METHOD FOR PREPARING A COMPOSITE STRUCTURE FOR PRODUCING A HOMOEPITAXIAL SILICON CARBIDE LAYER, AND ASSOCIATED COMPOSITE STRUCTURE" on Mar 11, 2025. With publication no. WO/2025/209781, the details related to the patent application was published on Oct 09, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BIARD, Hugo (C/O SOITECPARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN), COCHE, Mael (C/O SOITECPARC TECHNOLOGIQUE DES FONTAINESCHEMI...