INTERNATIONAL PATENT: SOITEC FILES APPLICATION FOR "METHOD FOR MANUFACTURING A HOMOEPITAXIAL SILICON CARBIDE LAYER, MAKING IT POSSIBLE TO LIMIT THE FORMATION OF BPD-TYPE DEFECTS AND ASSOCIATED COMPOSITE STRUCTURE"

GENEVA, May 27 -- SOITEC (PARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN) filed a patent application (PCT/EP2024/081418) for "METHOD FOR MANUFACTURING A HOMOEPITAXIAL SILICON CARBIDE LAYER, MAKING IT POSSIBLE TO LIMIT THE FORMATION OF BPD-TYPE DEFECTS, AND ASSOCIATED COMPOSITE STRUCTURE" on Nov 07, 2024. With publication no. WO/2025/103850, the details related to the patent application was published on May 22, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): DROUIN, Alexis (C/O SOITECPARC TECHNOLOGIQUE DES FONTAINESCHEMIN DES FRANQUES38190 BERNIN), ROUCHIER, Severin (C/O SOIT...