INTERNATIONAL PATENT: SILICON STORAGE TECHNOLOGY, INC. FILES APPLICATION FOR "MULTI-LEVEL RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS"

GENEVA, Nov. 18 -- SILICON STORAGE TECHNOLOGY, INC. (450 HOLGER WAYSAN JOSE, California 95134) filed a patent application (PCT/US2024/044032) for "MULTI-LEVEL RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS" on Aug 27, 2024. With publication no. WO/2025/235021, the details related to the patent application was published on Nov 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SONG, Yi (2928 Kiperash Dr.San Jose, California 95133), LIU, Xian (1236 Sargent Dr.Sunnyvale, California 94087), ZHOU, Feng (35910 Perkins StreetFremont, California 94536)

Abstract: An RRAM memory cell comprising a lower...