INTERNATIONAL PATENT: SHANGHAITECH UNIVERSITY, 上海科技大学 FILES APPLICATION FOR "CRYOGENIC QUASI-STATIC EMBEDDED DRAM FOR HIGH-ENERGY-EFFICIENCY COMPUTING-IN-MEMORY"

GENEVA, June 20 -- SHANGHAITECH UNIVERSITY (393 Middle Huaxia RoadPudong New Area, Shanghai 201210), 上海科技大学 (中国上海市浦东新区华夏中路393号) filed a patent application (PCT/CN2024/082165) for "CRYOGENIC QUASI-STATIC EMBEDDED DRAM FOR HIGH-ENERGY-EFFICIENCY COMPUTING-IN-MEMORY" on Mar 18, 2024. With publication no. WO/2025/123518, the details related to the patent application was published on Jun 19, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SHU, Yuhao (393 Midd...