INTERNATIONAL PATENT: SHANGHAI PRISEMI ELECTRONICS CO., LTD., 上海芯导电子科技股份有限公司 FILES APPLICATION FOR "ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND MANUFACTURING METHOD THEREFOR AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR"

Posted On: 2026-02-07

GENEVA, Feb. 7 -- SHANGHAI PRISEMI ELECTRONICS CO., LTD. (Building 7, No.2277 ZuChongZhi Road, China (Shanghai) Pilot Free Trade ZonePudong New Area, Shanghai 201203), 上海芯导电子科技股份有限公司 (中国上海市浦东新区中国(上海)自由贸易试验区祖冲之路2277弄7号) filed a patent application (PCT/CN2024/108565) for "ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR" on Jul 30, 2024. With publication no. WO/2026/025296, the d...

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INTERNATIONAL PATENT: SHANGHAI PRISEMI ELECTRONICS CO., LTD., 上海芯导电子科技股份有限公司 FILES APPLICATION FOR "ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND MANUFACTURING METHOD THEREFOR AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR"