INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "TRANSISTOR CONTACT STRUCTURE WITH UPPER LEVEL INSULATING SPACER AND METHOD OF MAKING THE SAME"

GENEVA, Oct. 14 -- SANDISK TECHNOLOGIES, INC. (951 SanDisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/011216) for "TRANSISTOR CONTACT STRUCTURE WITH UPPER LEVEL INSULATING SPACER AND METHOD OF MAKING THE SAME" on Jan 10, 2025. With publication no. WO/2025/212147, the details related to the patent application was published on Oct 09, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FUJITA, Takahito (951 SanDisk DriveMilpitas, California 95035), SHISHIDO, Kiyokazu (951 SanDisk DriveMilpitas, California 95035), NAKATSUJI, Hiroshi (951 SanDisk DriveMilpitas, Californi...