INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TOP SOURCE CONTACT TO DOPED SEMICONDUCTOR SOURCE TIPS AND METHODS FOR FORMING THE SAME"

GENEVA, Dec. 16 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2024/055575) for "THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TOP SOURCE CONTACT TO DOPED SEMICONDUCTOR SOURCE TIPS AND METHODS FOR FORMING THE SAME" on Nov 12, 2024. With publication no. WO/2025/254684, the details related to the patent application was published on Dec 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): NOGUCHI, Masato (c/o SanDisk Technologies LLC5080 Spectrum Drive, Suite 1050WAddison, Texas 75001), KITAZAWA, Keigo (c/o SanDisk Technologies LLC5080 ...