INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PHOSPHORUS-DOPED SILICON OXIDE ION-GETTERING STRUCTURES AND METHODS OF FORMING THE SAME"

GENEVA, April 16 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2024/031417) for "THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PHOSPHORUS-DOPED SILICON OXIDE ION-GETTERING STRUCTURES AND METHODS OF FORMING THE SAME" on May 29, 2024. With publication no. WO/2025/075678, the details related to the patent application was published on Apr 10, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FUJIMURA, Nobuyuki (c/o Western Digital Technologies, Inc.,5601 Great Oaks ParkwaySan Jose, California 95119), NAKAMURA, Tadashi (c/o Western Digita...