INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "THREE-DIMENSIONAL MEMORY CONTAINING ETCH-STOP ISOLATION CAPS OVER LATERAL ISOLATION STRUCTURES AND METHOD OF MAKING THE SAME"

GENEVA, Dec. 23 -- SANDISK TECHNOLOGIES, INC. (951 SanDisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/011247) for "THREE-DIMENSIONAL MEMORY CONTAINING ETCH-STOP ISOLATION CAPS OVER LATERAL ISOLATION STRUCTURES AND METHOD OF MAKING THE SAME" on Jan 10, 2025. With publication no. WO/2025/259312, the details related to the patent application was published on Dec 18, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): OGINOE, Tomohiro (951 SanDisk DriveMilpitas, California 95035), TSUTSUMI, Masanori (951 SanDisk DriveMilpitas, California 95035), OH, Junji (951 SanDisk Dr...