INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "METAL LINES LOCATED BETWEEN ETCH STOP LAYERS AND SEPARATED BY AIR GAPS AND METHODS OF FORMING THE SAME"

GENEVA, April 29 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2024/035673) for "METAL LINES LOCATED BETWEEN ETCH STOP LAYERS AND SEPARATED BY AIR GAPS AND METHODS OF FORMING THE SAME" on Jun 26, 2024. With publication no. WO/2025/085128, the details related to the patent application was published on Apr 24, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): AMANO, Fumitaka (c/o Western Digital Technologies, Inc.,5601 Great Oaks ParkwaySan Jose, California 95119)

Abstract: A semiconductor structure includes contact-level metal s...