INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "MEMORY DEVICE INCLUDING CONTOURED DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME"

GENEVA, Nov. 25 -- SANDISK TECHNOLOGIES, INC. (951 SanDisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/011211) for "MEMORY DEVICE INCLUDING CONTOURED DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME" on Jan 10, 2025. With publication no. WO/2025/239939, the details related to the patent application was published on Nov 20, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KUDO, Takashi (951 SanDisk DriveMilpitas, California 95035), MIZUTANI, Motoki (951 SanDisk DriveMilpitas, California 95035), SAKOTSUBO, Yukihiro (951 SanDisk DriveMilpitas, ...