INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACER CONFIGURATIONS AND METHOD OF MAKING THE SAME"

GENEVA, Feb. 4 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2024/030421) for "HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACER CONFIGURATIONS AND METHOD OF MAKING THE SAME" on May 21, 2024. With publication no. WO/2025/024037, the details related to the patent application was published on Jan 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KARUMURI, Sriharsha (c/o Western Digital Technologies, Inc.5601 Great Oaks ParkwaySan Jose, California 95119), ABE, Tomohisa (c/o WESTERN DIGITAL TECHNOLOGIES, INC.,56...