INTERNATIONAL PATENT: SAGA UNIVERSITY, 国立大学法人佐賀大学 FILES APPLICATION FOR "ELECTRONIC DEVICE SUBSTRATE, METHOD FOR MANUFACTURING SAME, SCHOTTKY BARRIER DIODE, FIELD EFFECT TRANSISTOR AND BIPOLAR TRANSISTOR"

GENEVA, Nov. 18 -- SAGA UNIVERSITY (1, Honjo-machi, Saga-shi, Saga8408502), 国立大学法人佐賀大学 (佐賀県佐賀市本庄町１番地) filed a patent application (PCT/JP2025/009724) for "ELECTRONIC DEVICE SUBSTRATE, METHOD FOR MANUFACTURING SAME, SCHOTTKY BARRIER DIODE, FIELD EFFECT TRANSISTOR, AND BIPOLAR TRANSISTOR" on Mar 13, 2025. With publication no. WO/2025/234213, the details related to the patent application was published on Nov 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO)...