INTERNATIONAL PATENT: SAFRAN, DEEP CONCEPT FILES APPLICATION FOR "METHOD FOR PRODUCING AT LEAST ONE ELECTRICAL CONNECTION WITHIN A POWER ELECTRONICS MODULE AND POWER ELECTRONICS MODULE"

GENEVA, Feb. 3 -- SAFRAN (2, boulevard du General Martial Valin75015 PARIS), DEEP CONCEPT (Technopole Helioparc 2 Avenue Pierre Angot64053 PAU CEDEX 9) filed a patent application (PCT/FR2024/050936) for "METHOD FOR PRODUCING AT LEAST ONE ELECTRICAL CONNECTION WITHIN A POWER ELECTRONICS MODULE AND POWER ELECTRONICS MODULE" on Jul 10, 2024. With publication no. WO/2025/022049, the details related to the patent application was published on Jan 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): YOUSSEF, Toni (Safran c/o Centre d'Excellence Propriete Intellectuelle Rond-point Rene Ravaud, Reau77...