INTERNATIONAL PATENT: RUNXIN MICROELECTRONICS (DALIAN) CO., LTD., 润新微电子（大连）有限公司 FILES APPLICATION FOR "EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD FOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE"

Posted On: 2025-06-09

GENEVA, June 9 -- RUNXIN MICROELECTRONICS (DALIAN) CO., LTD. (Building 7, Industrial Design Industrial Park, No. 57 Xinda Street, Qixianling, High-Tech Industrial Development ZoneDalian, Liaoning 116025), 润新微电子（大连）有限公司 (中国辽宁省大连市高新技术产业园区七贤岭信达街57号工业设计产业园7号楼) filed a patent application (PCT/CN2024/133406) for "EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD FOR EPITAXIAL STRUCTURE, AND SEMICONDUCTOR DEVICE" on Nov 21, ...

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INTERNATIONAL PATENT: RUNXIN MICROELECTRONICS (DALIAN) CO., LTD., 润新微电子（大连）有限公司 FILES APPLICATION FOR "EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD FOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE"