INTERNATIONAL PATENT: ROBERT BOSCH GMBH FILES APPLICATION FOR "METHOD FOR PRODUCING A DRIFT ZONE WITH P-DOPED REGIONS IN A SUPERJUNCTION POWER SEMICONDUCTOR COMPONENT AND A SUPERJUNCTION POWER SEMICONDUCTOR COMPONENT"

GENEVA, Oct. 13 -- ROBERT BOSCH GMBH (Postfach 30 02 2070442 Stuttgart) filed a patent application (PCT/EP2025/058781) for "METHOD FOR PRODUCING A DRIFT ZONE WITH P-DOPED REGIONS IN A SUPERJUNCTION POWER SEMICONDUCTOR COMPONENT, AND A SUPERJUNCTION POWER SEMICONDUCTOR COMPONENT" on Apr 01, 2025. With publication no. WO/2025/210000, the details related to the patent application was published on Oct 09, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HEYERS, Klaus (Peter-Cornelius-Str. 2972766 Reutlingen), SCHOSER, Siegmar (Kirchstr. 4072127 Kusterdingen), NUFER, Stefan (Goldregenweg 1570565 S...