INTERNATIONAL PATENT: ROBERT BOSCH GMBH FILES APPLICATION FOR "FIELD EFFECT TRANSISTOR WITH FIN STRUCTURE AND DRIFT REGION"

GENEVA, Dec. 8 -- ROBERT BOSCH GMBH (Postfach 30 02 2070442 Stuttgart) filed a patent application (PCT/EP2025/064578) for "FIELD EFFECT TRANSISTOR WITH FIN STRUCTURE AND DRIFT REGION" on May 27, 2025. With publication no. WO/2025/247867, the details related to the patent application was published on Dec 04, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BARINGHAUS, Jens (Darmsheimer Strasse 271069 Sindelfingen)

Abstract: The invention relates to a field effect transistor (100), comprising: a first type of doped separating layer (103), a second type of doped first connection region (104a) a...