INTERNATIONAL PATENT: RESONAC CORPORATION, 株式会社レゾナック FILES APPLICATION FOR "METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND INTERCONNECTION SUBSTRATE"

GENEVA, Nov. 10 -- RESONAC CORPORATION (9-1, Higashi-Shimbashi 1-chome, Minato-ku, Tokyo1057325), 株式会社レゾナック (東京都港区東新橋一丁目９番１号) filed a patent application (PCT/JP2024/016673) for "METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, AND INTERCONNECTION SUBSTRATE" on Apr 30, 2024. With publication no. WO/2025/229707, the details related to the patent application was published on Nov 06, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HAT...