INTERNATIONAL PATENT: RAYTHEON COMPANY FILES APPLICATION FOR "BIAS CIRCUIT FOR CASCODE FET AMPLIFIER WITH VARIABLE DRAIN BIAS"

GENEVA, Oct. 20 -- RAYTHEON COMPANY (1100 Wilson Blvd.Arlington, Virginia 22209) filed a patent application (PCT/US2025/015257) for "BIAS CIRCUIT FOR CASCODE FET AMPLIFIER WITH VARIABLE DRAIN BIAS" on Feb 10, 2025. With publication no. WO/2025/216798, the details related to the patent application was published on Oct 16, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BETTENCOURT, John P. (36 Gunnison RoadBoxford, Massachusetts 01921), WATTERS, Edward A. (371 Rutland StreetCarlisle, Massachusetts 01741), DAVIS, Joseph P. (100 Woodview WayApt. 1306Andover, Massachusetts 01810)

Abstract: A ci...